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TITLE: Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
AUTHORS: Baidus, NV; Vasilevskiy, MI ; Khazanova, SV; Zvonkov, BN; van der Meulen, HP; Calleja, JM; Vina, L;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 98, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
AUTHORS: Cerqueira, MF ; Semikina, TV; Baidus, NV; Alves, E ;
PUBLISHED: 2010, SOURCE: INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY, VOLUME: 39, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Electrical spin injection in light emitting Schottky diodes based on InGaAs/GaAs QW heterostructures  Full Text
AUTHORS: Baidus, NV; Vasilevskiy, MI ; Gomes, MJM ; Kulakovskii, VD; Zaitsev, SV; Dorokhin, MV; Demina, PB; Uskova, EA; Zvonkov, BN;
PUBLISHED: 2007, SOURCE: 28th International Conference on the Physics of Semiconductors (ICPS-28) in Physics of Semiconductors, Pts A and B, VOLUME: 893
INDEXED IN: Scopus WOS CrossRef
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TITLE: Electrical spin injection in forward biased Schottky diodes based on InGaAs-GaAs quantum well heterostructures  Full Text
AUTHORS: Baidus, NV; Vasilevskiy, MI ; Gomes, MJM ; Dorokhin, MV; Demina, PB; Uskova, EA; Zvonkov, BN; Kulakovskii, VD; Brichkin, AS; Chernenko, AV; Zaitsev, SV;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 89, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef
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TITLE: 1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures  Full Text
AUTHORS: Baidus, NV; Zvonkov, BN; Mokeeva, PB; Uskova, EA; Tikhov, SV; Vasilevskiy, MI ; Gomes, MJM ; Filonovich, SA ;
PUBLISHED: 2004, SOURCE: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 19, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef