Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
101
TITLE: Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors Full Text
AUTHORS: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 5
AUTHORS: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 5
102
TITLE: Novel Linear Analog-Adder Using a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
103
TITLE: A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs
AUTHORS: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
AUTHORS: Bahubalindruni, PG; Goes, J; Barquinha, P;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016 in 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016
104
TITLE: Basic Analog and Digital Circuits with a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
105
TITLE: Validating silicon polytrodes with paired juxtacellular recordings: method and dataset
AUTHORS: Joana P Neto; Gonalo Lopes; Joao Frazao; Joana Nogueira; Pedro Lacerda; Pedro Baiao; Arno Aarts; Alexandru Andrei; Silke Musa; Elvira Fortunato; Pedro Barquinha; Adam R Kampff;
PUBLISHED: 2016, SOURCE: JOURNAL OF NEUROPHYSIOLOGY, VOLUME: 116, ISSUE: 2
AUTHORS: Joana P Neto; Gonalo Lopes; Joao Frazao; Joana Nogueira; Pedro Lacerda; Pedro Baiao; Arno Aarts; Alexandru Andrei; Silke Musa; Elvira Fortunato; Pedro Barquinha; Adam R Kampff;
PUBLISHED: 2016, SOURCE: JOURNAL OF NEUROPHYSIOLOGY, VOLUME: 116, ISSUE: 2
106
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
107
TITLE: Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films Full Text
AUTHORS: Haeberle, J; Machulik, S; Janowitz, C; Manzke, R; Gaspar, D; Barquinha, P; Schmeisser, D;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 10
AUTHORS: Haeberle, J; Machulik, S; Janowitz, C; Manzke, R; Gaspar, D; Barquinha, P; Schmeisser, D;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 10
108
TITLE: Transistors: Solid State Electrochemical WO3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)
AUTHORS: Grey, P; Pereira, L; Pereira, S; Barquinha, P; Cunha, I; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: Advanced Electronic Materials, VOLUME: 2, ISSUE: 9
AUTHORS: Grey, P; Pereira, L; Pereira, S; Barquinha, P; Cunha, I; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: Advanced Electronic Materials, VOLUME: 2, ISSUE: 9
109
TITLE: Solid State Electrochemical WO3 Transistors with High Current Modulation
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
110
TITLE: The 2016 oxide electronic materials and oxide interfaces roadmap Full Text
AUTHORS: Lorenz, M; Rao, MSR; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
AUTHORS: Lorenz, M; Rao, MSR; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
