Improving Positive and Negative Bias Illumination Stress Stability in Parylene Passivated Igzo Transistors

AuthID
 P-00K-R4X
8
Author(s)
Martins, J
·
Rovisco, A
·
Document Type
Article
Year published
2016
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 109, Issue: 5, Pages: 051606 (4)
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-84981155175
Wos: WOS:000383091400013
Source Identifiers
ISSN: 0003-6951
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service