Reinhard Horst Schwarz
AuthID: R-000-F9H
61
TITLE: Ambipolar diffusion coefficients in a-SiC:H alloys in steady-state and transient grating measurements
AUTHORS: Weinert, H; Petrauskas, M; Kolenda, J; Galeckas, A; Wang, F; Schwarz, R;
PUBLISHED: 1993, SOURCE: Proceedings of the MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 297
AUTHORS: Weinert, H; Petrauskas, M; Kolenda, J; Galeckas, A; Wang, F; Schwarz, R;
PUBLISHED: 1993, SOURCE: Proceedings of the MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 297
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62
TITLE: Steady-state photocarrier grating technique applied to a-Si:H thin film transistors
AUTHORS: Wang, F; Reissner, M; Fischer, T; Grebner, S; Schwarz, R;
PUBLISHED: 1993, SOURCE: Proceedings of the MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 297
AUTHORS: Wang, F; Reissner, M; Fischer, T; Grebner, S; Schwarz, R;
PUBLISHED: 1993, SOURCE: Proceedings of the MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 297
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63
TITLE: CPM-characterization of light and current stressed a-Si:H diodes with nin, pip, and pin structures Full Text
AUTHORS: Ostendorf, HC; Schwarz, R; Kusian, W; Kruhler, W;
PUBLISHED: 1993, SOURCE: Proceedings of the 23rd IEEE Photovoltaic Specialists Conference in Conference Record of the IEEE Photovoltaic Specialists Conference
AUTHORS: Ostendorf, HC; Schwarz, R; Kusian, W; Kruhler, W;
PUBLISHED: 1993, SOURCE: Proceedings of the 23rd IEEE Photovoltaic Specialists Conference in Conference Record of the IEEE Photovoltaic Specialists Conference
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64
TITLE: Change transport along and across a-Si:H/a-SiC:H multilayers Full Text
AUTHORS: Arlauskas, K; Juska, G; Schwarz, R; Fischer, T;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
AUTHORS: Arlauskas, K; Juska, G; Schwarz, R; Fischer, T;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
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65
TITLE: Characterization of optoelectronic properties of a-Si1-xCx:H films Full Text
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
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66
TITLE: Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM Full Text
AUTHORS: Ostendorf, HC; Kusian, W; Kruhler, W; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
AUTHORS: Ostendorf, HC; Kusian, W; Kruhler, W; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 2
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67
TITLE: Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors Full Text
AUTHORS: Schwarz, R; Wang, F; Reissner, M;
PUBLISHED: 1993, SOURCE: Applied Physics Letters, VOLUME: 63, ISSUE: 8
AUTHORS: Schwarz, R; Wang, F; Reissner, M;
PUBLISHED: 1993, SOURCE: Applied Physics Letters, VOLUME: 63, ISSUE: 8
68
TITLE: Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous silicon Full Text
AUTHORS: Muschik, T; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 1
AUTHORS: Muschik, T; Schwarz, R;
PUBLISHED: 1993, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 164-166, ISSUE: PART 1
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69
TITLE: High-temperature annealing behavior of μτ products of electrons and holes in a-Si:H Full Text
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1992, SOURCE: Journal of Applied Physics, VOLUME: 71, ISSUE: 2
AUTHORS: Wang, F; Schwarz, R;
PUBLISHED: 1992, SOURCE: Journal of Applied Physics, VOLUME: 71, ISSUE: 2
70
TITLE: Interdiffusion in amorphous Si/SiC multilayers Full Text
AUTHORS: Kolodzey, J; Hanesch, P; Fischer, T; Schwarz, R; Zorn, G; Gobel, H;
PUBLISHED: 1992, SOURCE: Materials Science and Engineering B, VOLUME: 11, ISSUE: 1-4
AUTHORS: Kolodzey, J; Hanesch, P; Fischer, T; Schwarz, R; Zorn, G; Gobel, H;
PUBLISHED: 1992, SOURCE: Materials Science and Engineering B, VOLUME: 11, ISSUE: 1-4
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