61
TITLE: Comment on "Direct evidence of nanocluster-induced luminescence in InGaN epifilms" [Appl. Phys. Lett. 86, 021911 (2005)]  Full Text
AUTHORS: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 13
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
62
TITLE: Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering  Full Text
AUTHORS: Canhola, P; Martins, N; Raniero, L; Pereira, S; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
63
TITLE: Spectral response of large area amorphous silicon solar cells
AUTHORS: Raniero, L; Martins, N; Canhola, P; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: HIGH TEMPERATURE MATERIAL PROCESSES, VOLUME: 8, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
64
TITLE: Occurrence of 'accidental' InN quantum dots in indium gallium nitride/gallium nitride heterostructures
AUTHORS: O'Donnell, KP; Martin, RW; White, ME; Pereira, S; Mosselmans, JFW; Tobin, MJ; Grandjean, N; Damilano, B;
PUBLISHED: 2003, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 737
INDEXED IN: Scopus
IN MY: ORCID
65
TITLE: In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes  Full Text
AUTHORS: O'Donnell, KP; White, ME; Pereira, S; Mosselmans, JFW; Grandjean, N; Damilano, B; Massies, J;
PUBLISHED: 2002, SOURCE: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus CrossRef
IN MY: ORCID
66
TITLE: Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))
AUTHORS: O'Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Applied Physics Letters, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus
67
TITLE: Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)]  Full Text
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
INDEXED IN: CrossRef: 5
IN MY: ORCID
68
TITLE: Comment on “Low Stokes shift in thick and homogeneous InGaN epilayers” [Appl. Phys. Lett. 80, 550 (2002)]  Full Text
AUTHORS: O’Donnell, KP; Martin, RW; Pereira, S;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 81, ISSUE: 7
INDEXED IN: CrossRef
IN MY: ORCID
70
TITLE: Strain and compositional analysis of InGaN/GaN layers
AUTHORS: Pereira, S; Correia, MR; Pereira, E; Trager Cowan, C; Sweeney, F; Edwards, PR; O'Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
Page 7 of 8. Total results: 75.