Ulrich Wahl
AuthID: R-000-HB1
51
TITLE: Direct determination of atomic positions on the Cu(110)-(1×2)-H surface
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, ISSUE: 15
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, ISSUE: 15
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ORCID52
TITLE: Backscattering/channeling study of high-dose rare-earth implants into Si Full Text
AUTHORS: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTHORS: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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ORCID | ResearcherID53
TITLE: Direct determination of the lattice site of H atoms on the (1 x 2) reconstructed Cu (110) surface Full Text
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTHORS: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
IN MY: ORCID | ResearcherID
ORCID | ResearcherID54
TITLE: Lattice site location studies of ion implanted Li-8 in GaN Full Text
AUTHORS: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLISHED: 1998, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, ISSUE: 6
AUTHORS: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLISHED: 1998, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, ISSUE: 6
INDEXED IN: Scopus WOS
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ORCID | ResearcherID55
TITLE: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
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ORCID | ResearcherID56
TITLE: Emission channeling studies of Li in semiconductors Full Text
AUTHORS: Wahl, U;
PUBLISHED: 1997, SOURCE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, ISSUE: 3-4
AUTHORS: Wahl, U;
PUBLISHED: 1997, SOURCE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, ISSUE: 3-4
INDEXED IN: Scopus WOS
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ORCID | ResearcherID57
TITLE: Channeled ion beam synthesis of erbium silicide: Comparison of experimental studies and binary collision simulations Full Text
AUTHORS: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
AUTHORS: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
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ORCID | ResearcherID58
TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTHORS: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
AUTHORS: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
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TITLE: alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 23-27, 1995)
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
AUTHORS: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
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ORCID | ResearcherID60
TITLE: Thermal stability of substitutional ag in CdTe Full Text
AUTHORS: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
AUTHORS: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
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