Pierre Ruterana
AuthID: R-006-JQQ
11
TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
12
TITLE: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
13
TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
14
TITLE: Structural and optical characterization of Eu-implanted GaN Full Text
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
15
TITLE: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C Full Text
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
16
TITLE: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation Full Text
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
17
TITLE: Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation Full Text
AUTHORS: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, ISSUE: 7
AUTHORS: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, ISSUE: 7
18
TITLE: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Full Text
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
19
TITLE: Rare earth ion implantation in GaN: Damage formation and recovery
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 35th International School on the Physics of Semiconducting Compounds in ACTA PHYSICA POLONICA A, VOLUME: 110, ISSUE: 2
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 35th International School on the Physics of Semiconducting Compounds in ACTA PHYSICA POLONICA A, VOLUME: 110, ISSUE: 2
INDEXED IN: 
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Scopus WOS20
TITLE: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTHORS: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, ISSUE: 9
AUTHORS: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, ISSUE: 9
