Pierre Ruterana
AuthID: R-006-JQQ
1
TITLE: Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures Full Text
AUTHORS: Fialho, M; Magalhaes, S; Rodrigues, J; Chauvat, MP; Ruterana, P; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
AUTHORS: Fialho, M; Magalhaes, S; Rodrigues, J; Chauvat, MP; Ruterana, P; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: 
WOS
WOS2
TITLE: Implantation damage formation in a-, c- and m-plane GaN Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: 
Scopus WOS
Scopus WOS3
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
INDEXED IN: Scopus WOS
Scopus WOS4
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
5
TITLE: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
6
TITLE: Mechanisms of damage formation in Eu-implanted AlN Full Text
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
7
TITLE: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
INDEXED IN: Scopus 
CrossRef
Scopus CrossRef8
TITLE: Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4
9
TITLE: The high sensitivity of InN under rare earth ion implantation at medium range energy Full Text
AUTHORS: Lacroix, B; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ; Syrkin, A;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 44, ISSUE: 29
AUTHORS: Lacroix, B; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ; Syrkin, A;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 44, ISSUE: 29
10
TITLE: A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature Full Text
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1
