21
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
INDEXED IN: Scopus WOS
22
TITLE: High temperature annealing of rare earth implanted GaN films: Structural and optical properties  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef: 39
23
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
INDEXED IN: CrossRef
24
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing  Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
INDEXED IN: CrossRef
25
TITLE: The atomic structure of defects formed during doping of GaN with rare earth ions  Full Text
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
26
TITLE: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy  Full Text
AUTHORS: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
27
TITLE: Amorphisation of GaN during processing with rare earth ion beams  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
28
TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
Page 3 of 3. Total results: 28.