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TITLE: Electronic and dynamical properties of the silicon trivacancy
AUTHORS: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 26
12
TITLE: Elastic and optical properties of Cu2ZnSn(SexS1-x)(4) alloys: density functional calculations  Full Text
AUTHORS: Camps, I; Coutinho, J ; Mir, M; da Cunha, AF ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 27, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 14
13
TITLE: P-doping of Si nanoparticles: The effect of oxidation  Full Text
AUTHORS: Alexandra Carvalho; Sven Oberg; Manuel Barroso ; Mark J Rayson; Patrick Briddon;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 14
14
TITLE: Light induced degradation in B doped Cz-Si solar cells  Full Text
AUTHORS: Alexandra Carvalho; Paulo Santos; Jose Coutinho ; Robert Jones; Mark J Rayson; Patrick R Briddon;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 8
15
TITLE: Reconfigurations and diffusion of trivacancy in silicon  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2012, SOURCE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 2
16
TITLE: Electronic properties, doping, and defects in chlorinated silicon nanocrystals
AUTHORS: Carvalho, A; Oberg, S; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
17
TITLE: Effect of Oxidation on the Doping of Silicon Nanocrystals with Group III and Group V Elements
AUTHORS: Alexandra Carvalho; Mark J Rayson; Patrick R Briddon;
PUBLISHED: 2012, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 116, ISSUE: 14
INDEXED IN: Scopus WOS CrossRef
18
TITLE: Electrical activity of multivacancy defects in silicon. Electrical activity of multivacancy defects in silicon  Full Text
AUTHORS: Santos, P; Coutinho, J ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III / Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, VOLUME: 9, ISSUE: 10-11
INDEXED IN: Scopus WOS CrossRef: 2
19
TITLE: Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
AUTHORS: Leitao, JP ; Carvalho, A; Coutinho, J ; Pereira, RN ; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M ; Lundsgaard L Hansen; Nylandsted N Larsen; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 16
INDEXED IN: Scopus WOS
20
TITLE: Electronic structure modification of Si nanocrystals with F-4-TCNQ
AUTHORS: Carvalho, A; Coutinho, J ; Barroso, M ; Silva, EL; Oberg, S; Rayson, M; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 8
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