José Pedro de Abreu Coutinho


AuthID: R-000-8V3

Confirmed Publications: 105



1
TITLE: The trivacancy and trivacancy-oxygen family of defects in silicon
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2014, SOURCE: 15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, VOLUME: 205-206
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
2
TITLE: Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations  Full Text
AUTHORS: Oliveira, TA; Coutinho, J ; Torres, VJB ;
PUBLISHED: 2013, SOURCE: Symposium B on Thin Film Chalcogenide Photovoltaic Materials of the 11th E-MRS Spring Meetings in THIN SOLID FILMS, VOLUME: 535, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
3
TITLE: Strain-induced structure transformations on Si(111) and Ge(111) surfaces: A combined density-functional and scanning tunneling microscopy study  Full Text
AUTHORS: Zhachuk, R; Teys, S; Coutinho, J ;
PUBLISHED: 2013, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 138, ISSUE: 22
INDEXED IN: Scopus WOS CrossRef: 16
IN MY: ORCID
4
TITLE: Elastic and optical properties of Cu2ZnSn(SexS1-x)(4) alloys: density functional calculations  Full Text
AUTHORS: Camps, I; Coutinho, J ; Mir, M; da Cunha, AF ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 27, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 14
IN MY: ORCID
5
TITLE: Electrical activity of multivacancy defects in silicon. Electrical activity of multivacancy defects in silicon  Full Text
AUTHORS: Santos, P; Coutinho, J ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III / Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, VOLUME: 9, ISSUE: 10-11
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
6
TITLE: Electronic and dynamical properties of the silicon trivacancy
AUTHORS: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 26
IN MY: ORCID
7
TITLE: Light induced degradation in B doped Cz-Si solar cells  Full Text
AUTHORS: Alexandra Carvalho; Paulo Santos; Jose Coutinho ; Robert Jones; Mark J Rayson; Patrick R Briddon;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
8
TITLE: Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants  Full Text
AUTHORS: Zhachuk, RA; Olshanetsky, BZ; Coutinho, J ;
PUBLISHED: 2012, SOURCE: JETP LETTERS, VOLUME: 95, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
9
TITLE: Reconfigurations and diffusion of trivacancy in silicon  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2012, SOURCE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
10
TITLE: Ab initio study of height contrast in scanning tunneling microscopy of Ge/Si surface layers grown on Si(111) in presence of Bi
AUTHORS: Ruslan Zhachuk; Jose Coutinho ;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
Page 1 of 11. Total results: 105.

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