E. Wendler
AuthID: R-006-NPS
1
TITLE: Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide Full Text
AUTHORS: Filintoglou, K; Pinakidou, F; Arvanitidis, J; Christofilos, D; Paloura, EC; Ves, S; Kutza, P; Ph Lorenz; Gerlach, P; Wendler, E; Undisz, A; Rettenmayr, M; Milchanin, O; Komarov, FF; Lorenz, K; Katsikini, M;
PUBLISHED: 2020, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 127, ISSUE: 3
AUTHORS: Filintoglou, K; Pinakidou, F; Arvanitidis, J; Christofilos, D; Paloura, EC; Ves, S; Kutza, P; Ph Lorenz; Gerlach, P; Wendler, E; Undisz, A; Rettenmayr, M; Milchanin, O; Komarov, FF; Lorenz, K; Katsikini, M;
PUBLISHED: 2020, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 127, ISSUE: 3
INDEXED IN: 
Scopus 
WOS
Scopus WOS2
TITLE: Crystal damage analysis of implanted AlxGa1-xN (0 <= x <= 1) by ion beam techniques Full Text
AUTHORS: Nd. N Faye; Dobeli, M; Wendler, E; Brunner, F; Weyers, M; Magalhaes, S; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
AUTHORS: Nd. N Faye; Dobeli, M; Wendler, E; Brunner, F; Weyers, M; Magalhaes, S; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: WOS
WOS3
TITLE: Implantation damage formation in a-, c- and m-plane GaN Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: Scopus WOS
Scopus WOS4
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO Full Text
AUTHORS: Alexander Azarov; Elke Wendler; Katharina Lorenz; Edouard Monakhov; Bengt G Svensson;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
AUTHORS: Alexander Azarov; Elke Wendler; Katharina Lorenz; Edouard Monakhov; Bengt G Svensson;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
INDEXED IN: Scopus WOS
Scopus WOS5
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
6
TITLE: Ion-beam induced effects in multi-layered semiconductor systems Full Text
AUTHORS: Elke Wendler; Nikolai A Sobolev; Andres Redondo Cubero; Katharina Lorenz;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
AUTHORS: Elke Wendler; Nikolai A Sobolev; Andres Redondo Cubero; Katharina Lorenz;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
INDEXED IN: WOS
WOS7
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
INDEXED IN: Scopus WOS
Scopus WOS8
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
INDEXED IN: 
CrossRef
CrossRef9
TITLE: EndoTOFPET-US: a novel multimodal tool for endoscopy and positron emission tomography
AUTHORS: Aubry, N; Auffray, E; Mimoun, FB; Brillouet, N; Bugalho, R; Charbon, E; Charles, O; Cortinovis, D; Courday, P; Cserkaszky, A; Damon, C; Doroud, K; M Fischer; Fornaro, G; M Fourmigue; Frisch, B; Fuerst, B; Gardiazabal, J; Gadow, K; Garutti, E; ...More
PUBLISHED: 2013, SOURCE: 14th International Workshop on Radiation Imaging Detectors in JOURNAL OF INSTRUMENTATION, VOLUME: 8, ISSUE: 4
AUTHORS: Aubry, N; Auffray, E; Mimoun, FB; Brillouet, N; Bugalho, R; Charbon, E; Charles, O; Cortinovis, D; Courday, P; Cserkaszky, A; Damon, C; Doroud, K; M Fischer; Fornaro, G; M Fourmigue; Frisch, B; Fuerst, B; Gardiazabal, J; Gadow, K; Garutti, E; ...More
PUBLISHED: 2013, SOURCE: 14th International Workshop on Radiation Imaging Detectors in JOURNAL OF INSTRUMENTATION, VOLUME: 8, ISSUE: 4
10
TITLE: Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO Full Text
AUTHORS: Wendler, E; Wesch, W; Yu. Y Azarov; Catarino, N; Redondo Cubero, A; Alves, E ; Lorenz, K ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
AUTHORS: Wendler, E; Wesch, W; Yu. Y Azarov; Catarino, N; Redondo Cubero, A; Alves, E ; Lorenz, K ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
