12
TITLE: Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions  Full Text
AUTHORS: Pinto, SRC; Buljan, M; Chahboun, A ; Roldan, MA; Bernstorff, S; Varela, M; Pennycook, SJ; Barradas, NP ; Alves, E ; Molina, SI; Ramos, MMD ; Gomes, MJM ;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 111, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
13
TITLE: Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering  Full Text
AUTHORS: Sara R C Pinto; Anabela G Rolo ; Maja Buljan; Adil Chahboun ; Sigrid Bernstorff; Nuno P Barradas ; Eduardo Alves ; Reza J Kashtiban; Ursel Bangert; Maria J M Gomes ;
PUBLISHED: 2011, SOURCE: NANOSCALE RESEARCH LETTERS, VOLUME: 6, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
14
TITLE: Magnetotransport properties of La0.7Sr0.3MnO3/Nd0.6Ca0.4MnO3 superlattices up to 25 T  Full Text
AUTHORS: Pinto, S; Pereira, AM ; Ventura, J ; Araujo, JP ; Hsu, D; Lin, JG;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 1
15
TITLE: Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix  Full Text
AUTHORS: Vieira, EMF; Pinto, SRC; Levichev, S ; Rolo, AG ; Chahboun, A ; Buljan, M; Barradas, NP ; Alves, E ; Bernstorff, S; Conde, O ; Gomes, MJM ;
PUBLISHED: 2011, SOURCE: EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials in MICROELECTRONIC ENGINEERING, VOLUME: 88, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
16
TITLE: Self-assembling of Ge quantum dots in an alumina matrix
AUTHORS: Buljan, M; Pinto, SRC; Rolo, AG ; Martin Sanchez, J; Gomes, MJM ; Grenzer, J; Muecklich, A; Bernstorff, S; Holy, V;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 82, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef
17
TITLE: Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies  Full Text
AUTHORS: Pinto, SRC; Rolo, AG ; Chahboun, A ; Maja Buljan; Khodorov, A ; Kashtiban, RJ; Bangert, U; Barradas, NP ; Alves, E ; Bernstorff, S; Gomes, MJM ;
PUBLISHED: 2010, SOURCE: MICROELECTRONIC ENGINEERING, VOLUME: 87, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef
18
TITLE: Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix  Full Text
AUTHORS: Pinto, SRC; Rolo, AG ; Gomes, MJM ; Ivanda, M; Bogdanovic Radovic, I; Grenzer, J; Muecklich, A; Barber, DJ; Bernstorff, S; Buljan, M;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef
19
TITLE: Raman study of stress effect on Ge nanocrystals embedded in Al2O3  Full Text
AUTHORS: Pinto, SRC; Rolo, AG ; Chahboun, A ; Kashtiban, RJ; Bangert, U; Gomes, MJM ;
PUBLISHED: 2010, SOURCE: THIN SOLID FILMS, VOLUME: 518, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef
20
TITLE: Structural study of Si1-xGex nanocrystals embedded in SiO2 films  Full Text
AUTHORS: Pinto, SRC; Kashtiban, RJ; Rolo, AG ; Buljan, M; Chahboun, A ; Bangert, U; Barradas, NP ; Alves, E ; Gomes, MJM ;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
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