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TITLE: Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots  Full Text
AUTHORS: Bodiou, L; Braud, A; L Doualan; Moncorge, R; Park, JH; Munasinghe, C; Steckl, AJ; Lorenz, K ; Alves, E ; Daudin, B;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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TITLE: Two colour experiments in Eu3+ implanted GaN  Full Text
AUTHORS: Bodiou, L; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 6th International Conference on f-Elements (ICFE-6) in JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 451, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Spectroscopic investigation of implanted epilayers of Tm3+ : GaN  Full Text
AUTHORS: Bodiou, L; Braud, A; Terpin, C; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLISHED: 2007, SOURCE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 122, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Effect of annealing temperature on luminescence in Eu implanted GaN  Full Text
AUTHORS: Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef