Andrés Redondo Cubero
AuthID: R-000-Z0D
51
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
52
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
AUTHORS: Redondo-Cubero, A; Lorenz, K; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
53
TITLE: Production of nanohole/nanodot patterns on Si(001) by ion beam sputtering with simultaneous metal incorporation Full Text
AUTHORS: Sánchez-García, JA; Gago, R; Caillard, R; Redondo-Cubero, A; Martin-Gago, JA; Palomares, FJ; Fernández, M; Vázquez, L;
PUBLISHED: 2009, SOURCE: Journal of Physics: Condensed Matter - J. Phys.: Condens. Matter, VOLUME: 21, ISSUE: 22
AUTHORS: Sánchez-García, JA; Gago, R; Caillard, R; Redondo-Cubero, A; Martin-Gago, JA; Palomares, FJ; Fernández, M; Vázquez, L;
PUBLISHED: 2009, SOURCE: Journal of Physics: Condensed Matter - J. Phys.: Condens. Matter, VOLUME: 21, ISSUE: 22
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TITLE: Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content Full Text
AUTHORS: Fernandez Garrido, S; Pereiro, J; Gonzalez Posada, F; Munoz, E; Calleja, E; Redondo Cubero, A; Gago, R;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 4
AUTHORS: Fernandez Garrido, S; Pereiro, J; Gonzalez Posada, F; Munoz, E; Calleja, E; Redondo Cubero, A; Gago, R;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 4
INDEXED IN: 
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ORCID | ResearcherID55
TITLE: Study of SiNx : H-y passivant layers for AlGaN/GaN high electron mobility transistors Full Text
AUTHORS: Redondo Cubero, A; Gago, R; Romero, MF; Jimenez, A; Gonzalez Posada, F; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: E-MRS 2007 Spring Meeting-Symposium F Novel Gain Materials and Devices Based on III-N-V Compounds in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, VOLUME: 5, ISSUE: 2
AUTHORS: Redondo Cubero, A; Gago, R; Romero, MF; Jimenez, A; Gonzalez Posada, F; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: E-MRS 2007 Spring Meeting-Symposium F Novel Gain Materials and Devices Based on III-N-V Compounds in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, VOLUME: 5, ISSUE: 2
INDEXED IN: WOS
WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID56
TITLE: Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles Full Text
AUTHORS: Martin Palma, RJ; Redondo Cubero, A; Gago, R; Ryan, JV; Pantano, CG;
PUBLISHED: 2008, SOURCE: JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY, VOLUME: 23, ISSUE: 7
AUTHORS: Martin Palma, RJ; Redondo Cubero, A; Gago, R; Ryan, JV; Pantano, CG;
PUBLISHED: 2008, SOURCE: JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY, VOLUME: 23, ISSUE: 7
INDEXED IN: WOS
WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID57
TITLE: Tuning the surface morphology in self-organized ion beam nanopatterning of Si(001) via metal incorporation: from holes to dots Full Text
AUTHORS: Sanchez Garcia, JA; Vazquez, L; Gago, R; Redondo Cubero, A; Albella, JM; Zs Czigany;
PUBLISHED: 2008, SOURCE: NANOTECHNOLOGY, VOLUME: 19, ISSUE: 35
AUTHORS: Sanchez Garcia, JA; Vazquez, L; Gago, R; Redondo Cubero, A; Albella, JM; Zs Czigany;
PUBLISHED: 2008, SOURCE: NANOTECHNOLOGY, VOLUME: 19, ISSUE: 35
INDEXED IN: WOS
WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID58
TITLE: Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Full Text
AUTHORS: Fernandez Garrido, S; Redondo Cubero, A; Gago, R; Bertram, F; Christen, J; Luna, E; Trampert, A; Pereiro, J; Munoz, E; Calleja, E;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 104, ISSUE: 8
AUTHORS: Fernandez Garrido, S; Redondo Cubero, A; Gago, R; Bertram, F; Christen, J; Luna, E; Trampert, A; Pereiro, J; Munoz, E; Calleja, E;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 104, ISSUE: 8
INDEXED IN: WOS
WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID59
TITLE: Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction Full Text
AUTHORS: Redondo Cubero, A; Gago, R; Gonzalez Posada, F; Kreissig, U; di Forte F Poisson; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: THIN SOLID FILMS, VOLUME: 516, ISSUE: 23
AUTHORS: Redondo Cubero, A; Gago, R; Gonzalez Posada, F; Kreissig, U; di Forte F Poisson; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: THIN SOLID FILMS, VOLUME: 516, ISSUE: 23
INDEXED IN: WOS
WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID60
TITLE: Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction Full Text
AUTHORS: Redondo-Cubero, A; Gago, R; González-Posada, F; Kreissig, U; M.-A di Forte Poisson; A.F Braña; Muñoz, E;
PUBLISHED: 2008, SOURCE: Thin Solid Films, VOLUME: 516, ISSUE: 23
AUTHORS: Redondo-Cubero, A; Gago, R; González-Posada, F; Kreissig, U; M.-A di Forte Poisson; A.F Braña; Muñoz, E;
PUBLISHED: 2008, SOURCE: Thin Solid Films, VOLUME: 516, ISSUE: 23
