Effect of the Growth Temperature and the Aln Mole Fraction on In Incorporation and Properties of Quaternary Iii-Nitride Layers Grown by Molecular Beam Epitaxy

AuthID
P-00F-KEY
10
Author(s)
Fernandez Garrido, S
·
Gago, R
·
Bertram, F
·
Christen, J
·
Luna, E
·
Trampert, A
·
Pereiro, J
·
Munoz, E
·
Calleja, E
Document Type
Article
Year published
2008
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 104, Issue: 8
Indexing
Publication Identifiers
Wos: WOS:000260572100027
Source Identifiers
ISSN: 0021-8979
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