281
TITLE: Performance of resistive-charge position sensitive detectors for RBS/Channeling applications  Full Text
AUTHORS: Miranda, PA; Wahl, U; Catarino, N; Ribeiro R da Silva; Alves, E;
PUBLISHED: 2014, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, VOLUME: 760
INDEXED IN: Scopus WOS CrossRef
282
TITLE: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTHORS: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K; Li, HN; O'Connell, J; Alves, E; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLISHED: 2014, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, ISSUE: 29
INDEXED IN: Scopus WOS CrossRef
283
TITLE: Thermal Properties of Holmium-Implanted Gold Films  Full Text
AUTHORS: Prasai, K; Alves, E; Bagliani, D; Basak B Yanardag; Biasotti, M; Galeazzi, M; Gatti, F; Ribeiro Gomes, MR; Rocha, J; Uprety, Y;
PUBLISHED: 2014, SOURCE: JOURNAL OF LOW TEMPERATURE PHYSICS, VOLUME: 176, ISSUE: 5-6
INDEXED IN: Scopus WOS CrossRef
284
TITLE: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K; Piqueras, J; Alves, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, ISSUE: 35
INDEXED IN: Scopus WOS CrossRef
285
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers  Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
INDEXED IN: Scopus WOS CrossRef
286
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
287
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
288
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
INDEXED IN: CrossRef
289
TITLE: CHARACTERIZATION OF GaInSb CRYSTAL OBTAINED BY CZOCHRALSKI METHOD
AUTHORS: Morgana Streicher; Victoria Corrigidor; L.C. Alves; N. Franco; E. Alves; Eleani M da Costa; Berenice A Dedavid;
PUBLISHED: 2014
INDEXED IN: Handle
290
TITLE: Meshless analysis of shear deformable shells: the linear model  Full Text
AUTHORS: Jorge C Costa; Carlos M Tiago ; Paulo M Pimenta;
PUBLISHED: 2013, SOURCE: COMPUTATIONAL MECHANICS, VOLUME: 52, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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