Eduardo Jorge da Costa Alves
AuthID: R-000-4EK
121
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
INDEXED IN: 
WOS
WOS122
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
INDEXED IN: 
Scopus
Scopus123
TITLE: Project Fénix: What do students think about the factors that promote their learning? [Projeto Fénix: O que pensam os alunos sobre os fatores que promovem as suas aprendizagens?]
AUTHORS: Alves, JM; Cabral, I;
PUBLISHED: 2016, SOURCE: Educacao e Pesquisa, VOLUME: 42, ISSUE: 1
AUTHORS: Alves, JM; Cabral, I;
PUBLISHED: 2016, SOURCE: Educacao e Pesquisa, VOLUME: 42, ISSUE: 1
INDEXED IN: Scopus
Scopus124
TITLE: Determination of Be-9(p,p(0))Be-9, Be-9(p,d(0))Be-8 and Be-9(p,alpha(0))Li-6 cross sections at 150 degrees in the energy range 0.5-2.35 MeV Full Text
AUTHORS: Catarino, N; Barradas, NP; Alves, E;
PUBLISHED: 2016, SOURCE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
AUTHORS: Catarino, N; Barradas, NP; Alves, E;
PUBLISHED: 2016, SOURCE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
INDEXED IN: WOS
WOS125
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
126
TITLE: Design of experiments approach on the preparation of dry inhaler chitosan composite formulations by supercritical CO2-assisted spray-drying Full Text
AUTHORS: Cabral, RP; Sousa, AML; Silva, AS; Paninho, AI; Temtem, M; Costa, E; Casimiro, T; Aguiar Ricardo, A;
PUBLISHED: 2016, SOURCE: JOURNAL OF SUPERCRITICAL FLUIDS, VOLUME: 116
AUTHORS: Cabral, RP; Sousa, AML; Silva, AS; Paninho, AI; Temtem, M; Costa, E; Casimiro, T; Aguiar Ricardo, A;
PUBLISHED: 2016, SOURCE: JOURNAL OF SUPERCRITICAL FLUIDS, VOLUME: 116
127
TITLE: Composition measurement of epitaxial ScxGa1-xN films Full Text
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 6
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 6
128
TITLE: Functional behaviour of TiO2 films doped with noble metals
AUTHORS: Rodrigues, MS; Borges, J; Gabor, C; Munteanu, D; Apreutesei, M; Steyer, P; Lopes, C; Pedrosa, P; Alves, E; Barradas, NP; Cunha, L; Martinez Martinez, D; Vaz, F;
PUBLISHED: 2016, SOURCE: SURFACE ENGINEERING, VOLUME: 32, ISSUE: 8
AUTHORS: Rodrigues, MS; Borges, J; Gabor, C; Munteanu, D; Apreutesei, M; Steyer, P; Lopes, C; Pedrosa, P; Alves, E; Barradas, NP; Cunha, L; Martinez Martinez, D; Vaz, F;
PUBLISHED: 2016, SOURCE: SURFACE ENGINEERING, VOLUME: 32, ISSUE: 8
129
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
130
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
