Robert Francis Jones
AuthID: R-001-FHB
61
TITLE: Nitrogen-hydrogen defects in GaP Full Text
AUTHORS: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
AUTHORS: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
62
TITLE: Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon
AUTHORS: Leary, P; Jones, R; Oberg, S; Torres, VJB ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW B, VOLUME: 55, ISSUE: 4
AUTHORS: Leary, P; Jones, R; Oberg, S; Torres, VJB ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW B, VOLUME: 55, ISSUE: 4
63
TITLE: Theory of nitrogen-hydrogen complexes in GaP
AUTHORS: Torres, VJB ; Oberg, S; Jones, R;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
AUTHORS: Torres, VJB ; Oberg, S; Jones, R;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: 
Scopus 
WOS
Scopus WOS64
TITLE: Theory of nitrogen aggregates in diamond: The H3 and H4 defects
AUTHORS: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 1
AUTHORS: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 1
INDEXED IN: Scopus
Scopus