Vitor José Babau Torres


AuthID: R-000-HKG

Confirmed Publications: 64



1
TITLE: Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations  Full Text
AUTHORS: Oliveira, TA; Coutinho, J ; Torres, VJB ;
PUBLISHED: 2013, SOURCE: Symposium B on Thin Film Chalcogenide Photovoltaic Materials of the 11th E-MRS Spring Meetings in THIN SOLID FILMS, VOLUME: 535, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
2
TITLE: Ab initio modelling of boron related defects in amorphous silicon. Ab initio modelling of boron related defects in amorphous silicon  Full Text
AUTHORS: Tiago A Oliveira; Vtor J B Torres ;
PUBLISHED: 2012, SOURCE: Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III / Spring Meeting of the European-Materials-Reseach-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, VOLUME: 9, ISSUE: 10-11
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
3
TITLE: Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations
AUTHORS: Pages, O; Souhabi, J; Torres, VJB ; Postnikov, AV; Rustagi, KC;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 4
INDEXED IN: Scopus WOS
IN MY: ORCID
4
TITLE: Electronic structure of Zn, Cu and Ni impurities in germanium  Full Text
AUTHORS: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
5
TITLE: Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 24
IN MY: ORCID
6
TITLE: Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si  Full Text
AUTHORS: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
7
TITLE: Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 42
IN MY: ORCID
8
TITLE: Trivacancy in silicon: A combined DLTS and ab-initio modeling study  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
9
TITLE: Ab-initio vibrational properties of SiGe alloys  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLISHED: 2008, SOURCE: THIN SOLID FILMS, VOLUME: 517, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
10
TITLE: Formation of interstitial carbon-interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory
AUTHORS: Khirunenko, LI; Sosnin, MG; Yu. V Pomozov; Murin, LI; Markevich, VP; Peaker, AR; Almeida, LM; Coutinho, J ; Torres, VJB ;
PUBLISHED: 2008, SOURCE: PHYSICAL REVIEW B, VOLUME: 78, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID
Page 1 of 7. Total results: 64.

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