Robert William Martin
AuthID: R-001-HZW
1
TITLE: GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented beta-Ga2O3 substrate for UV vertical light emitting devices Full Text
AUTHORS: Ajia, IA; Yamashita, Y; Lorenz, K; Muhammed, MM; Spasevski, L; Almalawi, D; Xu, J; Iizuka, K; Morishima, Y; Anjum, DH; Wei, N; Martin, RW; Kuramata, A; Roqan, IS;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 8
AUTHORS: Ajia, IA; Yamashita, Y; Lorenz, K; Muhammed, MM; Spasevski, L; Almalawi, D; Xu, J; Iizuka, K; Morishima, Y; Anjum, DH; Wei, N; Martin, RW; Kuramata, A; Roqan, IS;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 8
INDEXED IN: 
Scopus 
WOS
Scopus WOS2
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
WOS3
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
INDEXED IN: Scopus
Scopus4
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
5
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
6
TITLE: Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates Full Text
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
7
TITLE: Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-implanted, Mg-doped HVPE GaN Full Text
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
8
TITLE: Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLISHED: 2012, SOURCE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLISHED: 2012, SOURCE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396
INDEXED IN: Scopus 
CrossRef
Scopus CrossRef9
TITLE: InGaN epilayer characterization by microfocused x-ray reciprocal space mapping Full Text
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Martin, RW; Edwards, PR; Pereira, S ;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 99, ISSUE: 18
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Martin, RW; Edwards, PR; Pereira, S ;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 99, ISSUE: 18
10
TITLE: Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN
AUTHORS: Kachkanov, V; O'Donnell, KP; Rice, C; Wolverson, D; Martin, RW; Lorenz, K; Alves, E ; Bockowski, M;
PUBLISHED: 2011, SOURCE: 2010 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1290
AUTHORS: Kachkanov, V; O'Donnell, KP; Rice, C; Wolverson, D; Martin, RW; Lorenz, K; Alves, E ; Bockowski, M;
PUBLISHED: 2011, SOURCE: 2010 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1290
INDEXED IN: Scopus CrossRef
Scopus CrossRef