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TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates  Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
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TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 &lt; x &lt; 0.28) thin films grown on GaN templates
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
INDEXED IN: Scopus
3
TITLE: Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells due to the incorporation of metallic nanocrystals
AUTHORS: Pereira, S; Trindade, T; Martins, MA; Watson, IM; Krokhin, AA; Neogi, A; Llopis, A;
PUBLISHED: 2016, SOURCE: CLEO: Applications and Technology, CLEO AT 2016 in Optics InfoBase Conference Papers
INDEXED IN: Scopus
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TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 7
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TITLE: Electrostatic enhancement of light emitted by semiconductor quantum well  Full Text
AUTHORS: Krokhin, A; Neogi, A; Llopis, A; Mahat, M; Gumen, L; Pereira, S; Watson, I;
PUBLISHED: 2015, SOURCE: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON '19) in 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), VOLUME: 647, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
7
TITLE: Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells  Full Text
AUTHORS: Jie Lin; Antonio Llopis; Arkadii Krokhin; Sergio Pereira; Ian M Watson; Arup Neogi;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 104, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef
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TITLE: Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping  Full Text
AUTHORS: Vyacheslav Kachkanov; Igor Dolbnya; Kevin O'Donnell; Katharina Lorenz ; Sergio Pereira ; Ian Watson; Thomas Sadler; Haoning N Li; Vitaly Zubialevich; Peter Parbrook;
PUBLISHED: 2013, SOURCE: 4th International Symposium on Growth of III-Nitrides (ISGN) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, VOLUME: 10, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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TITLE: Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits
AUTHORS: Meg Mahat; Antonio Llopis; Richard D Schaller; Ian Watson; Sergio Periera; Arup Neogi;
PUBLISHED: 2012, SOURCE: MRS COMMUNICATIONS, VOLUME: 2, ISSUE: 2
INDEXED IN: WOS CrossRef
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TITLE: Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
AUTHORS: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLISHED: 2012, SOURCE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396
INDEXED IN: Scopus CrossRef
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