Ian M. Watson
AuthID: R-001-HZX
31
TITLE: Direct evidence for strain inhomogeneity in InxGa1-xN epilayers by Raman spectroscopy Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Watson, IM; Liu, C; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 12
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Watson, IM; Liu, C; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 12
32
TITLE: Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering Full Text
AUTHORS: Barradas, NP ; Alves, E ; Pereira, S ; Shvartsman, VV; Kholkin, AL ; Pereira, E; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM; Mayer, M;
PUBLISHED: 2004, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 217, ISSUE: 3
AUTHORS: Barradas, NP ; Alves, E ; Pereira, S ; Shvartsman, VV; Kholkin, AL ; Pereira, E; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM; Mayer, M;
PUBLISHED: 2004, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 217, ISSUE: 3
33
TITLE: In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures Full Text
AUTHORS: Deatcher, CJ; Liu, C; Pereira, S ; Lada, M; Cullis, AG; Sun, YJ; Brandt, O; Watson, IM;
PUBLISHED: 2003, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 18, ISSUE: 4
AUTHORS: Deatcher, CJ; Liu, C; Pereira, S ; Lada, M; Cullis, AG; Sun, YJ; Brandt, O; Watson, IM;
PUBLISHED: 2003, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 18, ISSUE: 4
34
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002) Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
35
TITLE: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing Full Text
AUTHORS: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 16
AUTHORS: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 16
36
TITLE: Photoluminescence excitation spectroscopy of InGaN epilayers Full Text
AUTHORS: White, ME; O'Donnell, KP; Martin, RW; Pereira, S ; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
AUTHORS: White, ME; O'Donnell, KP; Martin, RW; Pereira, S ; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
37
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
38
TITLE: Depth resolved studies of indium content and strain in InGaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
