Sérgio Nuno Canteiro de Magalhães
AuthID: R-001-JX8
21
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: 
WOS
WOS22
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
INDEXED IN: 
Scopus
Scopus23
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
24
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
INDEXED IN: WOS
WOS25
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
INDEXED IN: Scopus
Scopus26
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
27
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
28
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
29
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
INDEXED IN: Scopus WOS
Scopus WOS30
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
