81
TITLE: New metallurgical systems for electronic soldering applications  Full Text
AUTHORS: Gonçalves, C; Ferreira, J; Fortunato, E; Ferreira, I; Martins, R; A.P Marvão; J.I Martins; Harder, T; Oppelt, R;
PUBLISHED: 1999, SOURCE: Sensors and Actuators A: Physical, VOLUME: 74, ISSUE: 1-3
INDEXED IN: CrossRef
IN MY: ORCID
82
TITLE: Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXED IN: WOS
83
TITLE: Influence of the H-2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
AUTHORS: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLISHED: 1998, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXED IN: WOS
84
TITLE: Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques  Full Text
AUTHORS: MARTINS, R; VIEIRA, M; FERREIRA, I; FORTUNATO, E; GUIMARAES, L;
PUBLISHED: 1996, SOURCE: Solar Energy Materials and Solar Cells, VOLUME: 41-42
INDEXED IN: CrossRef
IN MY: ORCID
85
TITLE: ROLE OF OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DOPED SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY SPATIAL SEPARATION TECHNIQUES
AUTHORS: MARTINS, R ; VIEIRA, M; FERREIRA, I; FORTUNATO, E ;
PUBLISHED: 1995, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, VOLUME: 13, ISSUE: 4
INDEXED IN: WOS
86
TITLE: SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY SPATIAL SEPARATION TECHNIQUES
AUTHORS: MARTINS, R; FERREIRA, I; FORTUNATO, E ; VIEIRA, M;
PUBLISHED: 1994, SOURCE: Symposium on Amorphous Silicon Technology, at the 1994 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY-1994, VOLUME: 336
INDEXED IN: Scopus WOS
IN MY: ORCID
87
TITLE: TUNNELING IN VERTICAL MU-C-SI/A-SIXCYOZ-H/MU-C-SI HETEROSTRUCTURES  Full Text
AUTHORS: FORTUNATO, E ; MARTINS, R ; FERREIRA, I; SANTOS, M; MACARICO, A; GUIMARAES, L;
PUBLISHED: 1989, SOURCE: JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 115, ISSUE: 1-3
INDEXED IN: WOS
Page 9 of 9. Total results: 87.