Role Of Oxygen Partial-Pressure On The Properties Of Doped Silicon Oxycarbide Microcrystalline Layers Produced By Spatial Separation Techniques

AuthID
 P-001-GQ0
4
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Document Type
Article
Year published
1995
Published
in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, ISSN: 0734-2101
Volume: 13, Issue: 4, Pages: 2199-2209 (11)
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Wos: WOS:A1995RK46100060
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ISSN: 0734-2101
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