Katharina Lorenz


AuthID: R-000-90E

Publications Awaiting Confirmation

81
TITLE: ZnO micro/nanocrystals grown by Laser Assisted Flow Deposition
AUTHORS: Rodrigues, J; Fernandes, AJS; Mata, D; Holz, T; Carvalho, RG; Fath F Allah; Ben, T; Gonzalez, D; Silva, RF; da Cunha, AF; Correia, MR; Alves, LC; Lorenz, K; Neves, AJ; Costa, FM; Monteiro, T;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
82
TITLE: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTHORS: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K; Li, HN; O'Connell, J; Alves, E; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLISHED: 2014, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, ISSUE: 29
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
83
TITLE: High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3  Full Text
AUTHORS: Muhammed, MM; Peres, M; Yamashita, Y; Morishima, Y; Sato, S; Franco, N; Lorenz, K; Kuramata, A; Roqan, IS;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ResearcherID
84
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review (vol 53, 060901, 2014)
AUTHORS: Jose G Marques; Katharina Lorenz;
PUBLISHED: 2014, SOURCE: OPTICAL ENGINEERING, VOLUME: 53, ISSUE: 6
INDEXED IN: WOS
IN MY: ResearcherID
85
TITLE: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K; Piqueras, J; Alves, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, ISSUE: 35
INDEXED IN: Scopus WOS CrossRef
IN MY: ResearcherID
86
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers  Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
INDEXED IN: Scopus WOS CrossRef
IN MY: ResearcherID
87
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ResearcherID
88
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
IN MY: ResearcherID
89
90
TITLE: Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates  Full Text
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
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