Katharina Lorenz
AuthID: R-000-90E
21
TITLE: Engineering strain and conductivity of MoO3 by ion implantation (vol 169, pg 15, 2019) Full Text
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2020, SOURCE: ACTA MATERIALIA, VOLUME: 199
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2020, SOURCE: ACTA MATERIALIA, VOLUME: 199
INDEXED IN: 
WOS
WOS22
TITLE: RBS/C, XRR, and XRD Studies of Damage Buildup in Er-Implanted ZnO Full Text
AUTHORS: Przemyslaw Jozwik; Sergio Magalhaes; Renata Ratajczak; Cyprian Mieszczynski; Miguel Sequeira; Andrzej Turos; Roman Boettger; Rene Heller; Katharina Lorenz; Eduardo Alves;
PUBLISHED: 2019, SOURCE: Symposium K on Defect-Induced Effects in Nanomaterials at the Meeting of the European-Materials-Research-Society in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 256, ISSUE: 5
AUTHORS: Przemyslaw Jozwik; Sergio Magalhaes; Renata Ratajczak; Cyprian Mieszczynski; Miguel Sequeira; Andrzej Turos; Roman Boettger; Rene Heller; Katharina Lorenz; Eduardo Alves;
PUBLISHED: 2019, SOURCE: Symposium K on Defect-Induced Effects in Nanomaterials at the Meeting of the European-Materials-Research-Society in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 256, ISSUE: 5
INDEXED IN: 
Scopus WOS
Scopus WOS23
TITLE: Eu Activation in beta-Ga2O3 MOVPE Thin Films by Ion Implantation
AUTHORS: Peres, M; Nogales, E; Mendez, B; Lorenz, K; Correia, MR; Monteiro, T; Ben Sedrine, N;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
AUTHORS: Peres, M; Nogales, E; Mendez, B; Lorenz, K; Correia, MR; Monteiro, T; Ben Sedrine, N;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
INDEXED IN: Scopus WOS
Scopus WOS24
TITLE: Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2019, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 210
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2019, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 210
INDEXED IN: Scopus WOS
Scopus WOS25
TITLE: Measuring strain caused by ion implantation in GaN Full Text
AUTHORS: Mendes, P; Lorenz, K; Alves, E; Schwaiger, S; Scholz, F; Magalhaes, S;
PUBLISHED: 2019, SOURCE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 98
AUTHORS: Mendes, P; Lorenz, K; Alves, E; Schwaiger, S; Scholz, F; Magalhaes, S;
PUBLISHED: 2019, SOURCE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 98
INDEXED IN: Scopus WOS
Scopus WOS26
TITLE: Engineering strain and conductivity of MoO3 by ion implantation Full Text
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2019, SOURCE: ACTA MATERIALIA, VOLUME: 169
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2019, SOURCE: ACTA MATERIALIA, VOLUME: 169
INDEXED IN: WOS
WOS27
TITLE: Micro-Opto-Electro-Mechanical Device Based on Flexible beta-Ga2O3 Micro-Lamellas
AUTHORS: Marco Peres; Fernandes, AJS; Oliveira, FJ; Alves, LC; Alves, E; Monteiro, TS; Cardoso, S; Alonso Orts, M; Nogales, E; Mendez, B; Villora, EG; Shimamura, K; Lorenz, K;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
AUTHORS: Marco Peres; Fernandes, AJS; Oliveira, FJ; Alves, LC; Alves, E; Monteiro, TS; Cardoso, S; Alonso Orts, M; Nogales, E; Mendez, B; Villora, EG; Shimamura, K; Lorenz, K;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
INDEXED IN: Scopus WOS
Scopus WOS28
TITLE: Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation Full Text
AUTHORS: Andres Redondo Cubero; Luis Vazquez; Denis Jalabert; Katharina Lorenz; Nebiha Ben Sedrine;
PUBLISHED: 2019, SOURCE: CRYSTALS, VOLUME: 9, ISSUE: 9
AUTHORS: Andres Redondo Cubero; Luis Vazquez; Denis Jalabert; Katharina Lorenz; Nebiha Ben Sedrine;
PUBLISHED: 2019, SOURCE: CRYSTALS, VOLUME: 9, ISSUE: 9
INDEXED IN: Scopus WOS
Scopus WOS29
TITLE: Studying electronic properties in GaN without electrical contacts using gamma-gamma vs e(-)-gamma Perturbed Angular Correlations Full Text
AUTHORS: Barbosa, MB; Correia, JG; Lorenz, K; Vianden, R; Araujo, JP ;
PUBLISHED: 2019, SOURCE: SCIENTIFIC REPORTS, VOLUME: 9, ISSUE: 1
AUTHORS: Barbosa, MB; Correia, JG; Lorenz, K; Vianden, R; Araujo, JP ;
PUBLISHED: 2019, SOURCE: SCIENTIFIC REPORTS, VOLUME: 9, ISSUE: 1
30
TITLE: Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms Full Text
AUTHORS: Przemyslaw Jozwik; Lech Nowicki; Renata Ratajczak; Anna Stonert; Cyprian Mieszczynski; Andrzej Turos; Krzysztof Morawiec; Katharina Lorenz; Eduardo Alves;
PUBLISHED: 2019, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 126, ISSUE: 19
AUTHORS: Przemyslaw Jozwik; Lech Nowicki; Renata Ratajczak; Anna Stonert; Cyprian Mieszczynski; Andrzej Turos; Krzysztof Morawiec; Katharina Lorenz; Eduardo Alves;
PUBLISHED: 2019, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 126, ISSUE: 19
INDEXED IN: Scopus WOS
Scopus WOS