Measuring Strain Caused by Ion Implantation in Gan

AuthID
 P-00Q-F2N
6
Author(s)
Mendes, P
·
Schwaiger, S
·
Scholz, F
·
Document Type
Article
Year published
2019
Published
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 98, Pages: 95-99 (5)
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Wos®
Scopus®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-85063759927
Wos: WOS:000465188500016
Source Identifiers
ISSN: 1369-8001
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