81
TITLE: High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3  Full Text
AUTHORS: Muhammed, MM; Peres, M; Yamashita, Y; Morishima, Y; Sato, S; Franco, N; Lorenz, K; Kuramata, A; Roqan, IS;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
82
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review (vol 53, 060901, 2014)
AUTHORS: Jose G Marques; Katharina Lorenz;
PUBLISHED: 2014, SOURCE: OPTICAL ENGINEERING, VOLUME: 53, ISSUE: 6
INDEXED IN: WOS
83
TITLE: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K; Piqueras, J; Alves, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, ISSUE: 35
INDEXED IN: Scopus WOS CrossRef
84
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers  Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K; Li, HN; Alves, E; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
INDEXED IN: Scopus WOS CrossRef
85
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
86
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
88
TITLE: Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates  Full Text
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
89
TITLE: Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering  Full Text
AUTHORS: Lorenz, K; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLISHED: 2013, SOURCE: ACTA MATERIALIA, VOLUME: 61, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
90
TITLE: Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations  Full Text
AUTHORS: Barbosa, MB; Goncalves, JN ; Redondo Cubero, A ; Miranda, SMC; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Mendez, B; Johnston, K; Alves, E ; Vianden, R; Araujo, JP ; Lorenz, K; Correia, JG ;
PUBLISHED: 2013, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 250, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 4
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