Structural and Charge Trapping Properties of Two Bilayer (Ge+Sio2)/Sio2 Films Deposited on Rippled Substrate

AuthID
P-003-1VA
9
Author(s)
Buljan, M
·
Grenzer, J
·
Holy, V
·
Radic, N
·
Misic Radic, T
·
Bernstorff, S
·
Pivac, B
·
Capan, I
Document Type
Article
Year published
2010
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 97, Issue: 16, Pages: 163117 (3)
Indexing
Publication Identifiers
Scopus: 2-s2.0-77958457281
Wos: WOS:000283502100073
Source Identifiers
ISSN: 0003-6951
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