Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

AuthID
 P-004-689
9
Author(s)
Nilsson, J
·
Guinea, F
·
Castro Neto, AH
Document Type
Article
Year published
2007
Published
in PHYSICAL REVIEW LETTERS, ISSN: 0031-9007
Volume: 99, Issue: 21
Indexing
Wos®
Scopus®
Crossref®1645
Pubmed®
Google Scholar®
Publication Identifiers
Pubmed: 18233240
Scopus: 2-s2.0-36249007086
Wos: WOS:000251107500045
Source Identifiers
ISSN: 0031-9007
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service