Three-State Memory Combining Resistive and Magnetic Switching Using Tunnel Junctions

AuthID
 P-004-6TW
7
Author(s)
Zhang, Z
·
Liu, Y
·
Document Type
Article
Year published
2007
Published
in JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN: 0022-3727
Volume: 40, Issue: 19, Pages: 5819-5823 (5)
Indexing
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Scopus®
Crossref®16
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-34748868091
Wos: WOS:000250604000004
Source Identifiers
ISSN: 0022-3727
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