Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Bis (Diethylamino)Silane Precursor with N2-Plasma

AuthID
P-01A-B3D
3
Author(s)
Cunha, FM
·
Silva, MF
·
Document Type
Article
Year published
2026
Published
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 202, Pages: 110182 (8)
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Publication Identifiers
Scopus: 2-s2.0-105019406383
Wos: WOS:001607423700006
Source Identifiers
ISSN: 1369-8001
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