Negative Bias Stress and Avalanche Effects in Schottky Diodes Based on Zinc Nitride Deposited at Room Temperature

AuthID
 P-01A-GRX
2
Author(s)
Dominguez, MA
·
Document Type
Article
Year published
2025
Published
in IEEE Transactions on Electron Devices, ISSN: 0018-9383
Pages: 1-5
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ISSN: 0018-9383
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