Role of the Sio2 Buffer Layer Thickness in the Formation of Si/Sio2/Nc-Ge/Sio2 Structures by Dry Oxidation

AuthID
P-004-JA8
8
Author(s)
Ortiz, MI
·
Prieto, AC
·
Rodriguez, A
·
Rodriguez, T
·
Jimenez, J
·
Ballesteros, C
·
Document Type
Article
Year published
2006
Published
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 249, Issue: 1-2 SPEC. ISS., Pages: 306-309 (4)
Conference
17Th International Conference on Ion Beam Analysis, Date: JUN 26-JUL 01, 2005, Location: Seville, SPAIN, Sponsors: Univ Autonoma Madrid, Univ Sevilla, Junta Andalucia, Minist Educ & Ciencia, Consejo Superior Investigaciones Cient, Int Atomic Energy Agcy, European Act COST G8, Boem Phys Soc, High Voltage Engn Europa BV, Banco Santander Cent Hispano, Schering Espana
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Publication Identifiers
Scopus: 2-s2.0-33745870854
Wos: WOS:000239545000074
Source Identifiers
ISSN: 0168-583X
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