Mechanisms of Damage Formation During Rare Earth Ion Implantation in Nitride Semiconductors

AuthID
 P-006-JM4
3
Author(s)
Document Type
Article
Year published
2013
Published
in JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN: 0021-4922
Volume: 52, Issue: 11, Pages: 11NH02 (7)
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Publication Identifiers
Scopus: 2-s2.0-84888988182
Wos: WOS:000328492300040
Source Identifiers
ISSN: 0021-4922
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