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Application of High-Resolution X-Ray Diffraction to Study Strain Status in Si1-Xgex/Si1-Ygey/Si (001) Heterostructures

AuthID
P-000-PMX

Author(s)

Chtcherbatchev, KD

Sequeira, AD

Franco, N

Barradas, NP

Myronov, M

Mironov, OA

Parker, EHC

Document Type

Article

Year published

2002

Published

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 91, Pages: 453-456 (4)

Conference

9Th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (Drip Ix), Date: SEP 24-28, 2001, Location: RIMINI, ITALY

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Publication Identifiers

DOI: 10.1016/s0921-5107(01)01001-7

Scopus: 2-s2.0-0037197409

Wos: WOS:000174864400097

Source Identifiers

ISSN: 0921-5107

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Application of High-Resolution X-Ray Diffraction to Study Strain Status in Si1-Xgex/Si1-Ygey/Si (001) Heterostructures

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Application of High-Resolution X-Ray Diffraction to Study Strain Status in Si1-Xgex/Si1-Ygey/Si (001) Heterostructures

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