Accurately Modeling the Drain to Source Current in Recessed Gate P-Hemt Devices

AuthID
 P-001-2YZ
6
Author(s)
Fernandez, T
·
Tazon, A
·
Garcia, JL
Document Type
Article
Year published
1999
Published
in IEEE ELECTRON DEVICE LETTERS, ISSN: 0741-3106
Volume: 20, Issue: 11, Pages: 557-559 (3)
Indexing
Wos®
Scopus®
Crossref®9
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-0343462268
Wos: WOS:000083431700005
Source Identifiers
ISSN: 0741-3106
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