Publications

Annealing Behavior and Lattice Site Location of Hf Implanted Gan

AuthID
P-001-4B5

Author(s)

Alves, E

da Silva, MF

Marques, JG

Soares, JC

Freitag, K

Document Type

Article

Year published

1999

Published

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 59, Issue: 1-3, Pages: 207-210 (4)

Conference

Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-Mrs Meeting), Date: 16 June 1998 through 19 June 1998, Location: Strasbourg, Sponsors: Nichia Chemicals;Shinkosha Ltd.;Toyoda Gosei Ltd.;Emcore Corp.

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Metadata
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Publication Identifiers

DOI: 10.1016/s0921-5107(98)00392-4

Scopus: 2-s2.0-0033528894

Wos: WOS:000080689000044

Source Identifiers

ISSN: 0921-5107

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