Influence of the Sputtering Parameters on the Properties of Al2O3 and Aln Insulators in Spin Tunneling Junctions

AuthID
P-001-CR9
10
Author(s)
Sun, JJ
·
Sousa, RC
·
da Silva, FF
·
Galvao, TTP
·
Pinho, NM
·
da Silva, MF
·
8
Editor(s)
Tobin, J; Chambliss, D; Kubinski, D; Barmak, K; Dederichs, P; deJonge, W; Katayama, T; Schuhl, A
Document Type
Proceedings Paper
Year published
1997
Published
in MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 475, Pages: 469-474 (6)
Conference
9Th International Symposium on the Structure and Properties of Magnetic Ultrathin Films, Multilayers, Surfaces, and Nanostructures, Date: MAR 31-APR 04, 1997, Location: SAN FRANCISCO, CA, Sponsors: Ford Res Lab, Digital Instruments, Fujitsu Ltd, GMW Associates, Hitachi Ltd, Cent Res Lab, Komag Inc, Lake Shore Cryotronics Inc, Lawrence Livermore Natl Lab, Dept Energy, MDC Vacuum Prod Corp, MMR Technol, Phys Electr Inc, Princeton Measurements Corp, Tencor Instruments, Toshiba Corp, US Inc
Indexing
Publication Identifiers
Scopus: 2-s2.0-0031357671
Wos: WOS:000071594300066
Source Identifiers
ISSN: 0272-9172
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