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Strain Compensation by Heavy Boron Doping in Si1– Xge X Layers Grown by Solid Phase Epitaxy
AuthID
P-00J-V33
8
Author(s)
Rodríguez, A
·
Rodríguez, T
·
Sanz-Hervás, A
·
Kling, A
·
Soares, JC
·
da Silva, MF
·
Ballesteros, C
·
Gwilliam, RM
Document Type
Article
Year published
1997
Published
in
Journal of Materials Research - J. Mater. Res.,
ISSN: 0884-2914
Volume: 12, Issue: 07, Pages: 1698-1705
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DOI
:
10.1557/jmr.1997.0234
Source Identifiers
ISSN
: 0884-2914
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