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Quantitative Depth Profiling of Si1-Xgex Structures by Time-Of-Flight Secondary Ion Mass Spectrometry and Secondary Neutral Mass Spectrometry

AuthID
P-00K-CN8

Author(s)

Drozdov, MN

Drozdov, YN

Csik, A

Novikov, AV

Vad, K

Yunin, PA

Yurasov, DV

Belykh, SF

Gololobov, GP

Suvorov, DV

Tolstogouzov, A

Document Type

Article

Year published

2016

Published

in THIN SOLID FILMS, ISSN: 0040-6090

Volume: 607, Pages: 25-31 (7)

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Scopus^®

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Publication Identifiers

DOI: 10.1016/j.tsf.2016.03.049

Scopus: 2-s2.0-84962815194

Wos: WOS:000375130800004

Source Identifiers

ISSN: 0040-6090

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Quantitative Depth Profiling of Si1-Xgex Structures by Time-Of-Flight Secondary Ion Mass Spectrometry and Secondary Neutral Mass Spectrometry

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Quantitative Depth Profiling of Si1-Xgex Structures by Time-Of-Flight Secondary Ion Mass Spectrometry and Secondary Neutral Mass Spectrometry

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