Energy-Dependent Relaxation Time in Quaternary Amorphous Oxide Semiconductors Probed by Gated Hall Effect Measurements

AuthID
 P-00M-DGG
9
Author(s)
Watanabe, S
·
Banger, KK
·
Warwick, CN
·
Document Type
Article
Year published
2017
Published
in PHYSICAL REVIEW B, ISSN: 2469-9950
Volume: 95, Issue: 4
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Publication Identifiers
Scopus: 2-s2.0-85010749462
Wos: WOS:000392075400004
Source Identifiers
ISSN: 2469-9950
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