Compensation of Long-Term Memory Effects on Gan Hemt-Based Power Amplifiers

AuthID
 P-00N-0EZ
6
Author(s)
Document Type
Article
Year published
2017
Published
in IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN: 0018-9480
Volume: 65, Issue: 9, Pages: 3379-3388 (10)
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Wos: WOS:000409542000029
Source Identifiers
ISSN: 0018-9480
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