The Effects of Argon and Helium Dilution in the Growth of Nc-Si:h Thin Films by Plasma-Enhanced Chemical Vapor Deposition

AuthID
 P-00N-7G2
5
Author(s)
Chaibi, F
·
Jemai, R
·
Khemakhem, H
·
Document Type
Article
Year published
2018
Published
in JOURNAL OF MATERIALS SCIENCE, ISSN: 0022-2461
Volume: 53, Issue: 5, Pages: 3672-3681 (10)
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Wos®
Scopus®
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Publication Identifiers
Scopus: 2-s2.0-85033487252
Wos: WOS:000417731300047
Source Identifiers
ISSN: 0022-2461
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