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Competitive and Cost Effective High-K Based 28Nm Cmos Technology for Low Power Applications
AuthID
P-00N-QTF
P-00N-QTF
32
Author(s)
Arnaud, F
·Thean, A
·Eller, M
·Lipinski, M
·Ostermayr, M
·Kang, K
·Kim, NS
·[+7]·
[+5]·
Matsuoka, F
·Lindsay, R
·Sudijono, J
·Johnson, FS
·Ku, JH
·Sekine, M
·Steegen, A
·Sampson, R
Document Type
Proceedings Paper
Year published
2009
Published
in Technical Digest - International Electron Devices Meeting, IEDM, ISSN: 0163-1918
Pages: 28.2.1-28.2.4
Conference
2009 International Electron Devices Meeting, Iedm 2009, Date: 7 December 2009 through 9 December 2009, Location: Baltimore, MD, Sponsors: IEEE Electron Devices Society
Indexing
Publication Identifiers
Scopus: 2-s2.0-77952337060
Source Identifiers
ISSN: 0163-1918
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Journal Factors
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Full Text
| Name Order | Name | Name Order | Name | Name Order | Name | ||
|---|---|---|---|---|---|---|---|
| 1 | Arnaud, F; | 2 | Thean, A; | 3 | Eller, M; | ||
| 4 | Lipinski, M; | 5 | The, YW; | 6 | Ostermayr, M; | ||
| 7 | Kang, K; | 8 | Kim, NS; | 9 | Ohuchi, K; | ||
| 10 | Han, JP; | 11 | Nair, DR; | 12 | Lian, J; | ||
| 13 | Uchimura, S; | 14 | Kohler, S; | 15 | Miyaki, S; | ||
| 16 | Ferreira, P ; | 17 | Park, JH; | 18 | Hamaguchi, M; | ||
| 19 | Miyashita, K; | 20 | Augur, R; | 21 | Zhang, Q; | ||
| 22 | Strahrenberg, K; | 23 | ElGhouli, S; | 24 | Bonnouvrier, J; | ||
| 25 | Matsuoka, F; | 26 | Lindsay, R; | 27 | Sudijono, J; | ||
| 28 | Johnson, FS; | 29 | Ku, JH; | 30 | Sekine, M; | ||
| 31 | Steegen, A; | 32 | Sampson, R; |