Pulsed I/V and S-Parameters Measurement System for Isodynamic Characterization of Power Gan Hemt Transistors

AuthID
P-00P-M4G
4
Author(s)
Goncalves, CF
·
Document Type
Article
Year published
2018
Published
in INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, ISSN: 1096-4290
Volume: 28, Issue: 8
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Publication Identifiers
Scopus: 2-s2.0-85053262417
Wos: WOS:000444953200020
Source Identifiers
ISSN: 1096-4290
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