Memristive Properties of Gan Hemts Containing Deep-Level Traps

AuthID
 P-00Q-0Y0
4
Author(s)
Document Type
Article
Year published
2019
Published
in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972
Volume: 256, Issue: 5
Conference
Symposium K on Defect-Induced Effects in Nanomaterials at the Meeting of the European-Materials-Research-Society, Date: JUN 17-22, 2018, Location: Strasbourg, FRANCE, Sponsors: European Mat Res Soc
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Publication Identifiers
Scopus: 2-s2.0-85058452653
Wos: WOS:000476946300021
Source Identifiers
ISSN: 0370-1972
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