Electronic Structure of Ytterbium-Implanted Gan at Ambient and High Pressure: Experimental and Crystal Field Studies

AuthID
 P-002-C53
7
Author(s)
Kaminska, A
·
Ma, CG
·
Brik, MG
·
Kozanecki, A
·
Bockowski, M
·
Suchocki, A
Document Type
Article
Year published
2012
Published
in JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN: 0953-8984
Volume: 24, Issue: 9, Pages: 095803 (8)
Indexing
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Pubmed®
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Publication Identifiers
Pubmed: 22322935
Scopus: 2-s2.0-84857242858
Wos: WOS:000300641000024
Source Identifiers
ISSN: 0953-8984
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